? semiconductor components industries, llc, 2012 october, 2012 ? rev. 8 1 publication order number: bss84lt1/d bss84l, bvss84l power mosfet single p-channel sot-23 -50 v, 10 ? sot ? 23 surface mount package saves board space ? aec q101 qualified and ppap capable ? bvss84l ? these devices are pb ? free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 50 vdc gate ? to ? source voltage ? continuous v gs 20 vdc drain current continuous @ t a = 25 c pulsed drain current (t p 10 s) i d i dm 130 520 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ? junction ? to ? ambient r ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 3 1 2 p ? channel http://onsemi.com sot ? 23 case 318 style 21 pd m marking diagram & pin assignment 3 2 1 drain gate 2 1 3 source device package shipping ? ordering information bss84lt1g sot ? 23 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. BVSS84LT1G sot ? 23 (pb ? free) 3000 / tape & reel pd = specific device code m = date code = pb ? free package (*note: microdot may be in either location) ? 50 v 10 @ 10 v v (br)dss r ds(on) max
bss84l, bvss84l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = ? 250 adc) v (br)dss ? 50 ? ? vdc zero gate voltage drain current (v ds = ? 25 vdc, v gs = 0 vdc) (v ds = ? 50 vdc, v gs = 0 vdc) (v ds = ? 50 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? ? ? 0.1 ? 15 ? 60 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 10 nadc on characteristics (note 1) gate ? source threaded voltage (v ds = v gs , i d = ? 250 a) v gs(th) ? 0.9 ? ? 2.0 vdc static drain ? to ? source on ? resistance (v gs = ? 5.0 vdc, i d = ? 100 madc) r ds(on) ? 4.7 10 transfer admittance (v ds = ? 25 vdc, i d = ? 100 madc, f = 1.0 khz) |y fs | 50 ? ? ms dynamic characteristics input capacitance v ds = 5.0 vdc c iss ? 36 ? pf output capacitance v ds = 5.0 vdc c oss ? 17 ? transfer capacitance v dg = 5.0 vdc c rss ? 6.5 ? switching characteristics (note 2) turn ? on delay time v dd = ? 15 vdc, i d = ? 2.5 adc, r l = 50 t d(on) ? 3.6 ? ns rise time t r ? 9.7 ? turn ? off delay time t d(off) ? 12 ? fall time t f ? 1.7 ? gate charge v dd = ? 40 vdc, i d = ? 0.5 a, v gs = ? 10 v q t ? 2.2 ? nc source ? drain diode characteristics continuous current i s ? ? ? 0.130 a pulsed current i sm ? ? ? 0.520 forward voltage (note 2) v gs = 0 v, i s = ? 130 ma v sd ? ? ? 2.2 v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. typical electrical characteristics 0 0.3 0.4 0.1 0.6 0.2 figure 1. transfer characteristics 1 1.5 2 2.5 3 -v gs , gate-to-source voltage (volts) figure 2. on ? region characteristics v ds = 10 v 150 c 25 c -55 c 024 10 0 0.15 0.2 -v ds , drain-to-source voltage (volts) 6 0.05 8 0.3 0.1 3.5 0.5 0.25 13 9 57 -3.25 v -2.75 v -2.25 v -2.5 v -3.0 v v gs = -3.5 v 4 0.35 0.4 0.5 0.45 t j = 25 c ? i d , drain current (amps) ? i d , drain current (amps)
bss84l, bvss84l http://onsemi.com 3 typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) r ds(on) , drain-to-source resistance (ohms figure 3. on ? resistance versus drain current 0 0.2 0.4 0.6 2 5 6 figure 4. on ? resistance versus drain current -i d , drain current (amps) figure 5. on ? resistance variation with temperature 1 0.001 0.1 1 t j , junction temperature ( c) figure 6. gate charge -v sd , diode forward voltage (volts) figure 7. body diode forward voltage 25 c v gs = -4.5 v v gs = -10 v i d = -0.52 a -55 -5 45 95 145 t j = 150 c 4 0.6 0.8 0 0.5 1.0 1.5 3 0.01 -55 c 25 c 2.0 r ds(on) , drain-to-source resistance (ohms 0 0.2 0.4 0.6 2 5 6 -i d , drain current (amps) v gs = -10 v 4 3 v gs , gate-to-source voltage (volts) 0 -6 -2 0 q t , total gate charge (pc) -8 -4 500 v ds = -40 v t j = 25 c 1000 i d = -0.5 a 1500 0.1 0.3 0.5 150 c -55 c 7 4.5 5.5 3.5 2.5 6.5 0.1 0.3 0.5 1.2 2 1.4 1.6 1.8 v gs = -4.5 v i d = -0.13 a 2000 2.5 3.0 150 c 25 c -55 c 8 9 7 -5 -1 -7 -3 i d , drain current (amps)
bss84l, bvss84l http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 21: pin 1. gate 2. source 3. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bss84lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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